https://scholars.lib.ntu.edu.tw/handle/123456789/329942| Title: | Reliability of low-temperature-processing hafnium oxide gate dielectrics prepared by cost-effective nitric acid oxidation technique | Authors: | JENN-GWO HWU | Issue Date: | 2007 | Journal Volume: | 7 | Journal Issue: | 4 | Start page/Pages: | 611-616 | Source: | IEEE Transactions on Device and Materials Reliability | URI: | http://www.scopus.com/inward/record.url?eid=2-s2.0-37549032666&partnerID=MN8TOARS http://scholars.lib.ntu.edu.tw/handle/123456789/329942 |
DOI: | 10.1109/TDMR.2007.910129 |
| Appears in Collections: | 電機工程學系 |
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