https://scholars.lib.ntu.edu.tw/handle/123456789/329943
標題: | Oxide-trapped charges induced by electrostatic discharge impulse stress | 作者: | JENN-GWO HWU | 關鍵字: | Electrostatic discharge (ESD); Gate dielectrics; MOS devices; Oxide-trapped charges; Semiconductor device reliability; Transmission line pulsing (TLP) | 公開日期: | 2007 | 卷: | 54 | 期: | 7 | 起(迄)頁: | 1666-1671 | 來源出版物: | IEEE Transactions on Electron Devices | 摘要: | The characteristics of oxide-trapped charges Qot induced by electrostatic discharge high-field current impulse stress, i.e., transmission line pulsing (TLP), were studied. It was observed that for a 3.2-nm-thin oxide, the centroid evolution and the critical density of positive oxide-trapped charges Qot+ to trigger oxide breakdown are about the same between dc and TLP impulse stresses. These results are consistent with the existing models of stress-induced trapping charges and hole-induced oxide breakdown. However, different behaviors of Qot and centroid were found for 14-nm-thick oxides subjected to different stress tests. TLP impulse stress generates far less amount of negative oxide-trapped charges Qot - than dc stress, and the positive oxide-trapped charges finally dominate over the negative oxide-trapped charges. This impulse stress imposes a high density and transient current on the oxide, which induces traps at the tunneling distance locally. The hotter injected electrons generate more efficient hole trappings to provoke breakdown with lower density of oxide-trapped charges in comparison with dc stress test. © 2007 IEEE. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-34447322028&doi=10.1109%2fTED.2007.899429&partnerID=40&md5=731cb07ce0a20f885044af7d751748a8 http://scholars.lib.ntu.edu.tw/handle/123456789/329943 |
DOI: | 10.1109/TED.2007.899429 | SDG/關鍵字: | Impulse stress; Oxide-trapped charges; Transmission line pulsing; Electrostatic discharge; Gate dielectrics; Mathematical models; Reliability; MOS devices |
顯示於: | 電機工程學系 |
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