Modeling and characterization of hydrogen-induced charge loss in nitride-trapping memory

Journal

IEEE Transactions on Electron Devices

Journal Volume

54

Journal Issue

6

Pages

1360-1365

Date Issued

2007

Author(s)

DOI

10.1109/TED.2007.895242

URI

http://www.scopus.com/inward/record.url?eid=2-s2.0-34249932782&partnerID=MN8TOARS

http://scholars.lib.ntu.edu.tw/handle/123456789/329944

Type

journal article