Modeling and characterization of hydrogen-induced charge loss in nitride-trapping memory
Journal
IEEE Transactions on Electron Devices
Journal Volume
54
Journal Issue
6
Pages
1360-1365
Date Issued
2007
Author(s)
Abstract
This paper studies hydrogen diffusion in nitride-based Flash memory. Distorted capacitance-voltage ( C-V) curves were obtained when the programmed devices were baked in an environment of hydrogen at a temperature of 400 degC. Hydrogen may invade the edge of the device. The effectively trapped electrons were eliminated by the invading hydrogen. Elimination is responsible for a nonuniform distribution of charges in capacitors and contributes to the distortion of C-V curves. The distorted C-V curve can be accurately simulated by superposing only two subcapacitors with appropriate area ratios. The hydrogen-invasion depth can also be calculated from the ratio of the subcapacitances. The hydrogen diffusion length decreased as the number of programmed electrons increased. Hydrogen invasion is modeled as a diffusion-limited process
SDGs
Type
journal article