https://scholars.lib.ntu.edu.tw/handle/123456789/329945
Title: | Low temperature (<400 °c) Al2O3 ultrathin gate dielectrics prepared by shadow evaporation of aluminum followed by nitric acid oxidation | Authors: | JENN-GWO HWU | Issue Date: | 2007 | Journal Volume: | 90 | Journal Issue: | 10 | Source: | Applied Physics Letters | URI: | http://www.scopus.com/inward/record.url?eid=2-s2.0-33947100102&partnerID=MN8TOARS http://scholars.lib.ntu.edu.tw/handle/123456789/329945 |
DOI: | 10.1063/1.2711290 |
Appears in Collections: | 電機工程學系 |
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