Effect of postoxidation annealing on the reliability of rapid thermal thin gate oxides

Journal

IEEE Electron Device Letters

Journal Volume

18

Journal Issue

1

Pages

1-3

Date Issued

1997

Author(s)

DOI

10.1109/55.553057

URI

http://www.scopus.com/inward/record.url?eid=2-s2.0-0030784336&partnerID=MN8TOARS

http://scholars.lib.ntu.edu.tw/handle/123456789/329951

Type

journal article