17.3% efficiency metal-oxide-semiconductor (MOS) solar cells with liquid-phase-deposited silicon dioxide
Journal
IEEE Electron Device Letters
Journal Volume
18
Journal Issue
11
Pages
565-567
Date Issued
1997
Author(s)
Abstract
In this work, simple and high efficiency silicon metal-oxide-semiconductor (MOS) solar cells with silicon dioxide prepared by room-temperature liquid phase deposition (LPD) method are proposed. The thickness of LPD oxide is about 5 nm in this work. After adding 2∼5 nm semi-transparent thin Al film between the 200 nm patterned Al cathode, all the solar cells' performance parameters are improved. For a cell exposed under 15 mW/cm2, short-circuit current density JSC up to 10.7 mA/cm2, open-circuit voltage VOC up to 412 mV, fill factor FF up to 59, and record effective conversion efficiency η up to 17.3% are obtained for this structure. Photo-conductivity property of LPD oxide is found and the mechanism is also discussed.
SDGs
Type
journal article