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College of Electrical Engineering and Computer Science / 電機資訊學院
Electrical Engineering / 電機工程學系
Carrier trapping effects on photoluminescence decay time in InGaN/GaN quantum wells with nanocluster structures
Details
Carrier trapping effects on photoluminescence decay time in InGaN/GaN quantum wells with nanocluster structures
Journal
Journal of Applied Physics
Journal Volume
101
Journal Issue
6
Date Issued
2007
Author(s)
CHIH-CHUNG YANG
Lu, Y.-C.
Chen, C.-Y.
Wang, H.-C.
Yang, C.C.
Cheng, Y.-C.
CHIH-CHUNG YANG
DOI
10.1063/1.2711148
URI
http://www.scopus.com/inward/record.url?eid=2-s2.0-34047092250&partnerID=MN8TOARS
http://scholars.lib.ntu.edu.tw/handle/123456789/330325
Type
journal article