A low actuation voltage electrostatic actuator for RF MEMS switch applications
Journal
Journal of Micromechanics and Microengineering
Journal Volume
17
Journal Issue
8
Pages
1649-1656
Date Issued
2007
Author(s)
Abstract
This paper presents the design, fabrication and characterization of an RF MEMS switch. Low actuation voltage and high isolation of the switch were achieved by exploiting buckling and bending effects induced by well-controlled residual stress. The effects of residual stress on improving the switch performance have been investigated using both analytical and numerical methods. The proposed RF switch has been fabricated by surface micromachining. The minimum actuation voltage of the fabricated switch was measured to be 10.2 V. At a 5 GHz signal frequency, the measured insertion loss and isolation are 0.21 dB and −44 dB, respectively. These results demonstrate that low voltage and high isolation of RF MEMS switches can be achieved with proper utilization of residual stresses.
SDGs
Type
journal article