Spin accumulation and magnetotransport in Co-Al-Co single-electron transistors
Journal
Physica Status Solidi (A) Applications and Materials Science
Journal Volume
204
Journal Issue
12
Pages
3999-4003
Date Issued
2007
Author(s)
Abstract
Abstract The bias‐voltage dependent oscillations of the magnetoresistance in Co‐Al‐Co single‐electron transistors have been investigated. Above the critical voltage comprising of superconducting gap and the charging energy, the conductance‐voltage characteristics show an oscillatory behavior with increasing bias‐voltage, resulting from the Coulomb staircase. We demonstrate that magnetoresistance could vary periodically from positive to negative values with bias‐voltage. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
SDGs
Type
journal article