Current scaling and electron heating in a GaN/AlGaN two-dimensional electron system
Journal
Journal of the Korean Physical Society
Journal Volume
50
Journal Issue
6
Pages
1666-1669
Date Issued
2007
Author(s)
Abstract
A GaN/AlGaN two-dimensional electron system (2DES) has been prepared on a Si substrate, and the electron heating effect in the 2DES has been studied experimentally by using the resistance of the 2DES as a self-thermometer. The relation Te ∼ I1. 42 was obtained, which is in contrast to Te ∼ I0.5 in the spin-split resistivity peaks in a GaAs/AlGaAs 2DES. A possible reason for this is discussed.
SDGs
Type
journal article
