https://scholars.lib.ntu.edu.tw/handle/123456789/332089
標題: | Extremely broadband AlGaAs/GaAs superluminescent diodes | 作者: | CHING-FUH LIN Lee, Bor-Lin |
公開日期: | 1997 | 卷: | 71 | 期: | 12 | 起(迄)頁: | 1598-1600 | 來源出版物: | Applied Physics Letters | 摘要: | Extremely broadband AlGaAs/GaAs superluminescent diodes are fabricated on substrate with four quantum wells of different widths. By choosing 20, 33, 56, and 125 Å, respectively, for the four quantum wells, the spectrum could be broadened to several times that of the conventional superluminescent diodes. The measured spectra of the fabricated devices with such quantum-well structure show that the full-width at half-maximum spectral width could be as large as 915 Å. © 1997 American Institute of Physics. |
URI: | http://www.scopus.com/inward/record.url?eid=2-s2.0-0031233155&partnerID=MN8TOARS http://scholars.lib.ntu.edu.tw/handle/123456789/332089 https://www.scopus.com/inward/record.uri?eid=2-s2.0-0031233155&doi=10.1063%2f1.119844&partnerID=40&md5=ba2faea29c82fa63a19fc468e6d97bec |
ISSN: | 00036951 | SDG/關鍵字: | Band structure; Bandwidth; Light emission; Metallorganic chemical vapor deposition; Phase transitions; Semiconducting aluminum compounds; Semiconducting gallium arsenide; Semiconductor quantum wells; Aluminum gallium arsenide; Superluminescent diodes; Light emitting diodes |
顯示於: | 電機工程學系 |
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