A new interference phenomenon in sub-60nm nitride-based flash memory
Journal
22nd IEEE Non-Volatile Semiconductor Memory Workshop
Pages
81-82
Date Issued
2007
Author(s)
Abstract
It is the first time to disclose that the similar interference from adjacent wordlines as found in floating-gate flash memory also exists in nitride-based flash memory. For sub-60nm nitride-based flash technologies, this interference effect cannot be ignored any more and should be well taken into consideration when defining the operation window of the memory products.
SDGs
Type
conference paper