https://scholars.lib.ntu.edu.tw/handle/123456789/337446
標題: | Correlation of the growth rate for selective epitaxial growth of silicon and oxide thickness and oxide coverage in a reduced pressure chemical vapor deposition pancake reactor | 作者: | Lee, K.-Y. KUNG-YEN LEE |
公開日期: | 2008 | 卷: | 26 | 期: | 5 | 起(迄)頁: | 1712-1717 | 來源出版物: | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures | URI: | http://www.scopus.com/inward/record.url?eid=2-s2.0-53349129606&partnerID=MN8TOARS http://scholars.lib.ntu.edu.tw/handle/123456789/337446 |
DOI: | 10.1116/1.2976567 |
顯示於: | 工程科學及海洋工程學系 |
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