Lateral nonuniformity effects of border traps on the characteristics of metal-oxide-semiconductor field-effect transistors subjected to high-field stresses
Journal
IEEE Transactions on Electron Devices
Journal Volume
55
Journal Issue
6
Pages
1366-1372
Date Issued
2008
Author(s)
Abstract
The lateral nonuniformity (LNU) effects of border traps are studied by exploring both the high- and low-frequency characteristics in N-type channel metal-oxide-semiconductor field-effect transistors. According to experimental data, the deterioration of nonuniformity is significantly enhanced at low frequencies. The cause may be due to the additional trapped charges of border traps (near-interface oxide traps) under the low-frequency measurement. This model is successfully simulated by the combination of low-frequency C-V curves with the heavily and lightly damaged regions. Additionally, the double-peak charge-pumping current is observed in low-frequency measurements, which can further support our hypothesis that border-trap-enhanced LNU exists. Finally, the geometric effect of the polygate and the thickness effect of the gate oxide are also investigated for the nonuniformity issue.
Type
journal article