The radiation hardness property of dry oxide grown by postoxidation cooling in oxygen ambient
Journal
Applied Physics A Solids and Surfaces
Journal Volume
46
Journal Issue
3
Pages
221-227
Date Issued
1988
Author(s)
Abstract
The radiation behavior of silicon oxides prepared under various postoxidation conditions is studied by60CO irradiation with a total dose of 106 rad. Before irradiation, it was shown that the sample obtained by postoxidation cooling in N2+O2 exhibited more positive initial oxide charges and larger negative charge-temperature instability than that obtained by postoxidation annealing in N2. But after considering the initial oxide field effect on the irradiation result, the former one is less sensitive to irradiation than the latter one. Surprisingly, this hardness ability is significantly enhanced when the orientation of silicon substrate is gradually tilted from [100] to [O11]. Possible explanations are given for these observations. It is supposed that the postoxidation cooling in N2+O2 provides a possible way for the oxide to become more radiation hard. © 1988 Springer-Verlag.
SDGs
Type
journal article