Photonic crystal light-emitting diode fabricated with photoelectrochemical wet etching and phase mask interference
Journal
2008 Int. Nano-Optoelectronics Workshop, iNOW 2008 in Cooperation With Int. Global-COE Summer School and 31st Int. Symposium on Optical Communications
Pages
253-254
Date Issued
2008
Author(s)
Abstract
We demonstrate the high light-extraction efficiency by using the photoelectrochemical etching technique for forming photonic crystal structures on an InGaN/GaN quantum-well light-emitting diode through phase-mask interference. More than 90% increase of output power is observed.
SDGs
Type
conference paper