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College of Science / 理學院
Physics / 物理學系
Huge positive magnetoresistance in a gated AlGaAsGaAs high electron mobility transistor structure at high temperatures
Details
Huge positive magnetoresistance in a gated AlGaAsGaAs high electron mobility transistor structure at high temperatures
Journal
Applied Physics Letters
Journal Volume
92
Journal Issue
13
Date Issued
2008
Author(s)
CHI-TE LIANG
DOI
10.1063/1.2906360
URI
http://www.scopus.com/inward/record.url?eid=2-s2.0-84939463008&partnerID=MN8TOARS
http://scholars.lib.ntu.edu.tw/handle/123456789/339688
Type
journal article