https://scholars.lib.ntu.edu.tw/handle/123456789/340121
Title: | Inversion n-channel GaN MOSFETs with atomic-layer-deposited A1 2 O 3 as gate dielectrics | Authors: | Chang, YC Chang, WH Chiu, HC Shiu, KH Lee, CH Hong, M Kwo, J Hong, JM Tsai, CC MINGHWEI HONG |
Issue Date: | 2008 | Source: | 2008 Device Research Conference | URI: | http://scholars.lib.ntu.edu.tw/handle/123456789/340121 |
Appears in Collections: | 應用物理研究所 |
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