GaN nanorod light emitting diode arrays with a nearly constant electroluminescent peak wavelength
Journal
Optics Express
Journal Volume
16
Journal Issue
14
Pages
10549
Date Issued
2008-06
Author(s)
Cheng-Yin Wang
Liang-Yi Chen
Cheng-Pin Chen
Yun-Wei Cheng
Min-Yung Ke
Min-Yann Hsieh
Han-Ming Wu
Lung-Han Peng
JianJang Huang
Abstract
A practical process to fabricate InGaN/GaN multiple quantum well light emitting diodes (LEDs) with a self-organized nanorod structure is demonstrated. The nanorod array is realized by using nature lithography of surface patterned silica spheres followed by dry etching. A layer of spin-on-glass (SOG), which intervening the rod spacing, serves the purpose of electric isolation to each of the parallel nanorod LED units. The electroluminescence peak wavelengths of the nanorod LEDs nearly remain as constant for an injection current level between 25mA and 100mA, which indicates that the quantum confined stark effect is suppressed in the nanorod devices. Furthermore, from the Raman light scattering analysis we identify a strain relaxation mechanism for lattice mismatch layers in the nanostructure.
Type
journal article