Skip to main content
English
中文
Log In
Log in
Log in with ORCID
NTU Single Sign On
Have you forgotten your password?
Home
College of Electrical Engineering and Computer Science / 電機資訊學院
Electrical Engineering / 電機工程學系
Modified growth of Ge quantum dots using C2H4 mediation by ultra-high vacuum chemical vapor deposition
Details
Modified growth of Ge quantum dots using C2H4 mediation by ultra-high vacuum chemical vapor deposition
Journal
Applied Surface Science
Journal Volume
254
Journal Issue
19
Pages
6261-6264
Date Issued
2008
Author(s)
CHEE-WEE LIU
Lee, S.W.
Chen, P.S.
Cheng, S.L.
Lee, M.H.
Chang, H.T.
Lee, C.-H.
CHEE-WEE LIU
DOI
10.1016/j.apsusc.2008.02.192
URI
http://www.scopus.com/inward/record.url?eid=2-s2.0-45049083912&partnerID=MN8TOARS
http://scholars.lib.ntu.edu.tw/handle/123456789/341149
Type
journal article