Modified growth of Ge quantum dots using C2H4 mediation by ultra-high vacuum chemical vapor deposition

Journal

Applied Surface Science

Journal Volume

254

Journal Issue

19

Pages

6261-6264

Date Issued

2008

Author(s)

Lee, S.W.

Chen, P.S.

Cheng, S.L.

Lee, M.H.

Chang, H.T.

Lee, C.-H.

DOI

10.1016/j.apsusc.2008.02.192

URI

http://www.scopus.com/inward/record.url?eid=2-s2.0-45049083912&partnerID=MN8TOARS

http://scholars.lib.ntu.edu.tw/handle/123456789/341149

Type

journal article