https://scholars.lib.ntu.edu.tw/handle/123456789/342451
標題: | Optical properties of InGaNAs/GaAs quantum well structures with GaNAs strain relief buffer layers | 作者: | Chen, Cheng-Yuan Lee, Jia-Ren Lu, Chien-Rong Liu, Hsiang-Lin Sun, Li-Wen HAO-HSIUNG LIN |
關鍵字: | A. Quantum well; A. Semiconductors; D. Optical properties | 公開日期: | 二月-2008 | 卷: | 69 | 期: | 2-3 | 起(迄)頁: | 493-496 | 來源出版物: | Journal of Physics and Chemistry of Solids | 摘要: | The modulated optical responses of InGaNAs/GaAs quantum well structures were characterized by photoreflectance spectroscopy. The quantum well excitonic interband transitions were observed in the spectral range above hν=Eg (InGaNAs). When the InGaNAs well is sandwiched in between GaNAs strain relief buffer layers, the quantum confinement potential becomes one step wider and increases the number of quantum states in the system. The quantum well subband energies and wave functions were calculated numerically to compare with the major optical features. The modulated optical responses are enhanced, especially for those quantum states with wave function extending into GaNAs and GaAs barriers where interface space charges induce strong internal field and enhance the electro-modulation efficiency. © 2007 Elsevier Ltd. All rights reserved. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-38749141758&doi=10.1016%2fj.jpcs.2007.07.033&partnerID=40&md5=4b5cfe44f836ebe0fe768f4d2de10454 | DOI: | 10.1016/j.jpcs.2007.07.033 | SDG/關鍵字: | Gallium compounds; Indium compounds; Optical properties; Semiconductor materials; Wave functions; Optical responses; Strain relief buffer layers; Semiconductor quantum wells |
顯示於: | 電機工程學系 |
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