https://scholars.lib.ntu.edu.tw/handle/123456789/342558| Title: | Breakdown Behavior of 40-nm PD-SOI NMOS Device Considering STI-Induced Mechanical Stress Effect | Authors: | I. S. Lin V. C. Su J. B. Kuo D. Chen C. S. Yeh C. T. Tsai M. Ma JAMES-B KUO |
Issue Date: | Jun-2008 | Journal Volume: | 29 | Journal Issue: | 6 | Start page/Pages: | 612-614 | Source: | IEEE Electron Device Letters | URI: | http://scholars.lib.ntu.edu.tw/handle/123456789/342558 | DOI: | 10.1109/LED.2008.922971 |
| Appears in Collections: | 電機工程學系 |
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