https://scholars.lib.ntu.edu.tw/handle/123456789/342558
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | I. S. Lin | en_US |
dc.contributor.author | V. C. Su | en_US |
dc.contributor.author | D. Chen | en_US |
dc.contributor.author | C. S. Yeh | en_US |
dc.contributor.author | C. T. Tsai | en_US |
dc.contributor.author | M. Ma | en_US |
dc.contributor.author | JAMES-B KUO | en_US |
dc.creator | I. S. Lin;V. C. Su;J. B. Kuo;D. Chen;C. S. Yeh;C. T. Tsai;M. Ma | - |
dc.date.accessioned | 2018-09-10T07:08:18Z | - |
dc.date.available | 2018-09-10T07:08:18Z | - |
dc.date.issued | 2008-06 | - |
dc.identifier.uri | https://www.scopus.com/inward/record.uri?eid=2-s2.0-44849106021&doi=10.1109%2fLED.2008.922971&partnerID=40&md5=40004d8b14bb16c18d2f958c42924b71 | - |
dc.description.abstract | This letter reports the shallow-trench-isolation (STI)-induced mechanical-stress-related breakdown behavior of the 40-nm PD-SOI NMOS device. As verified by the experimentally measured data and the 2-D simulation results, breakdown occurs at a higher drain voltage for the device with a smaller S/D length of 0.17 μ due to the weaker function of the parasitic bipolar device, which is offset by the stronger impact ionization in the post-pinchoff region coming from the bandgap narrowing generated by the STI-induced mechanical stress. © 2008 IEEE. | - |
dc.language | en | en |
dc.relation.ispartof | IEEE Electron Device Letters | en_US |
dc.source | AH-anncc | - |
dc.title | Breakdown Behavior of 40-nm PD-SOI NMOS Device Considering STI-Induced Mechanical Stress Effect | - |
dc.type | journal article | en |
dc.identifier.doi | 10.1109/LED.2008.922971 | - |
dc.identifier.scopus | 2-s2.0-44849106021 | - |
dc.identifier.isi | WOS:000256189000023 | - |
dc.relation.pages | 612-614 | - |
dc.relation.journalvolume | 29 | - |
dc.relation.journalissue | 6 | - |
item.openairecristype | http://purl.org/coar/resource_type/c_6501 | - |
item.openairetype | journal article | - |
item.grantfulltext | none | - |
item.cerifentitytype | Publications | - |
item.fulltext | no fulltext | - |
crisitem.author.dept | Electrical Engineering | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
顯示於: | 電機工程學系 |
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