https://scholars.lib.ntu.edu.tw/handle/123456789/342867
標題: | Optical properties of a-plane GaN strained by photo-chemically grown gallium hydroxide | 作者: | Wang, S.-L. Yeh, B.-C. Wu, H.-M. LUNG-HAN PENG Lai, C.-M. Ko, T.-S. Lu, T.-C. Wang, S.-C. Kung, A.-H. |
公開日期: | 一月-2008 | 起(迄)頁: | 1780-1782 | 來源出版物: | Physica Status Solidi (C) Current Topics in Solid State Physics | 會議論文: | 7th International Conference of Nitride Semiconductors, ICNS-7 | 摘要: | We report the observation of green emission centered at 500nm, accompanied with luminescence enhancement and spectral blue shift (∼31meV) in the bandedge emission from a-plane grown gallium nitride (GaN) passivated with gallium hydroxide (GaOOH). From study of the photo-current response and polarization-resolved low-temperature microphotoluminescence (μ-PL) we resolved an evolution of gain competition process between the green and the UV emission bands. By dissolving the oxide we recover the emission characteristics of the as-grown a-GaN. These observations can be ascribed to a formation of compressively-strained a-GaN due to a coherently grown GaOOH atop layer. The latter is responsible for the spectral blue shift and the generation of acceptor like deep-levels causing the green-band transition in the emission and photo-current response. Enhancement of bandedge emission from the oxide covered a-GaN is due to the GaOOH surface passivation effect which was prepared by the photo-enhance wet oxidation method. © 2008 Wiley-VCH Verlag GmbH & Co. KGaA. |
URI: | http://scholars.lib.ntu.edu.tw/handle/123456789/342867 https://www.scopus.com/inward/record.uri?eid=2-s2.0-77951230283&doi=10.1002%2fpssc.200778636&partnerID=40&md5=d5652b4fdc565528a87f9825bd266416 |
ISSN: | 18626351 | DOI: | 10.1002/pssc.200778636 | SDG/關鍵字: | A-plane; A-plane GaN; As-grown; Band transitions; Band-edge emissions; Blue shift; Current response; Deep-levels; Emission characteristics; Gain competition; Green emissions; Low temperatures; Luminescence enhancements; Microphotoluminescence; Surface passivation; UV emissions; Wet oxidation; Dissolution; Gallium alloys; Optical properties; Passivation; Gallium nitride |
顯示於: | 光電工程學研究所 |
在 IR 系統中的文件,除了特別指名其著作權條款之外,均受到著作權保護,並且保留所有的權利。