https://scholars.lib.ntu.edu.tw/handle/123456789/346820
Title: | Above-barrier states in GaAs-AlGaAs superlattices studied by photoconductivity and photoreflectance | Authors: | YANG-FANG CHEN D. Y. Lin Y. S. Huang M. C. Chen HAO-HSIUNG LIN JEN-CHEN FAN |
Issue Date: | 1999 | Journal Volume: | 86 | Journal Issue: | 3 | Start page/Pages: | 1460-1462 | Source: | Journal of Applied Physics | Abstract: | The quasibound states at the above barrier region in AlGaAs-GaAs superlattices can be clearly observed at room temperature by photoconductivity as well as photoreflectance measurements. Concrete evidence are provided to confirm that free carrier confinement at barrier layer does exist. The barrier width dependence of the above barrier transition energies can be described quite well by the modified Messiah's calculation. The simple calculation using the constructive interference condition can only explain the transitions at lower energies, and fails with increasing transition energy. |
URI: | http://www.scopus.com/inward/record.url?eid=2-s2.0-0032621308&partnerID=MN8TOARS http://scholars.lib.ntu.edu.tw/handle/123456789/346820 |
DOI: | 10.1063/1.370965 | SDG/Keyword: | Electron energy levels; Light reflection; Photoconductivity; Semiconducting aluminum compounds; Semiconducting gallium arsenide; Free carrier confinement; Photoreflectance measurement; Transition energy; Semiconductor superlattices |
Appears in Collections: | 物理學系 |
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