Association of 2100 cm-1 infrared spectra with microstructure in hydrogenated amorphous silicon
Journal
Solid State Communications
Journal Volume
71
Journal Issue
12
Pages
1127-1130
Date Issued
1989
Author(s)
Abstract
Various arguments are presented to show that the association of the silicon-hydrogen stretching mode at 2100 cm-1 observed in hydrogenated amorphous silicon with hydrogen bonding on inner surfaces of voids is questionable. It is suggested that the unique association of the 2100 cm-1 mode with poor photoelectronic properties may be flawed. We point out that the vibrational frequency shift due to the solid state effect caused by the surrounding dielectric medium is appreciably smaller than 100 cm-1. Further experiment and theoretical studies of the local environment arising the 2100 cm-1 mode are still needed. © 1989.
SDGs
Type
journal article