|Title:||Metal-oxide-semiconductor structure solar cell prepared by lowerature (<400°C) anodization technique||Authors:||Wang, C.-Y.
|Issue Date:||2009||Journal Volume:||156||Journal Issue:||3||Source:||Journal of the Electrochemical Society||Abstract:||
In this work, simple and low-cost metal-oxide-semiconductor (MOS) structure solar cells with silicon dioxide prepared by anodization technique in deionized water at room temperature are proposed. The characteristics of MOS structure solar cells are dependent on anodization time. It was observed that the efficiency and the leakage current density of MOS structure solar cells increase when the anodization time decreases. Oxide thickness is critical for the MOS structure solar cell and it can be controlled by anodization techniques. For a cell exposed under 1000 W m2, efficiency up to 9.7% was demonstrated in this work. © 2009 The Electrochemical Society.
|DOI:||10.1149/1.3060124||SDG/Keyword:||Deionized water; Dielectric devices; Electric conductivity; Photovoltaic cells; Semiconducting indium; Semiconducting silicon compounds; Semiconductor materials; Silica; Solar cells; Solar equipment; Anodization techniques; Anodization time; Leakage current densities; Metal-oxide semiconductors; Metal-oxide-semiconductor structures; Mos structures; Oxide thickness; Room temperatures; Silicon dioxides; Semiconducting silicon
|Appears in Collections:||電機工程學系|
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