https://scholars.lib.ntu.edu.tw/handle/123456789/347696
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Wang, C.-Y. | en_US |
dc.contributor.author | Hwu, J.-G. | en_US |
dc.contributor.author | JENN-GWO HWU | zz |
dc.creator | Wang, C.-Y.;Hwu, J.-G. | - |
dc.date.accessioned | 2018-09-10T07:29:07Z | - |
dc.date.available | 2018-09-10T07:29:07Z | - |
dc.date.issued | 2009 | - |
dc.identifier.uri | http://www.scopus.com/inward/record.url?eid=2-s2.0-59349118549&partnerID=MN8TOARS | - |
dc.identifier.uri | http://scholars.lib.ntu.edu.tw/handle/123456789/347696 | - |
dc.description.abstract | In this work, simple and low-cost metal-oxide-semiconductor (MOS) structure solar cells with silicon dioxide prepared by anodization technique in deionized water at room temperature are proposed. The characteristics of MOS structure solar cells are dependent on anodization time. It was observed that the efficiency and the leakage current density of MOS structure solar cells increase when the anodization time decreases. Oxide thickness is critical for the MOS structure solar cell and it can be controlled by anodization techniques. For a cell exposed under 1000 W m2, efficiency up to 9.7% was demonstrated in this work. © 2009 The Electrochemical Society. | - |
dc.language | en | en |
dc.relation.ispartof | Journal of the Electrochemical Society | en_US |
dc.source | AH | - |
dc.subject.classification | [SDGs]SDG7 | - |
dc.subject.other | Deionized water; Dielectric devices; Electric conductivity; Photovoltaic cells; Semiconducting indium; Semiconducting silicon compounds; Semiconductor materials; Silica; Solar cells; Solar equipment; Anodization techniques; Anodization time; Leakage current densities; Metal-oxide semiconductors; Metal-oxide-semiconductor structures; Mos structures; Oxide thickness; Room temperatures; Silicon dioxides; Semiconducting silicon | - |
dc.title | Metal-oxide-semiconductor structure solar cell prepared by lowerature (<400°C) anodization technique | - |
dc.type | journal article | en |
dc.identifier.doi | 10.1149/1.3060124 | - |
dc.relation.journalvolume | 156 | - |
dc.relation.journalissue | 3 | - |
item.fulltext | no fulltext | - |
item.grantfulltext | none | - |
item.openairetype | journal article | - |
item.openairecristype | http://purl.org/coar/resource_type/c_6501 | - |
item.cerifentitytype | Publications | - |
crisitem.author.dept | Electrical Engineering | - |
crisitem.author.dept | Electronics Engineering | - |
crisitem.author.orcid | 0000-0001-9688-0812 | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
顯示於: | 電機工程學系 |
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