Fluorinated thin gate oxides prepared by room temperature deposition followed by furnace oxidation
Journal
Solid-State Electronics
Journal Volume
43
Journal Issue
3
Pages
671-676
Date Issued
1999
Author(s)
Abstract
Room temperature deposition in H2SiF6 solution, i.e., liquid phase deposition (LPD), followed by furnace oxidation (FO) is first used to prepare fluorinated thin oxides (LPD/FO). The amount of fluorine existing in the gate oxide is controlled by varying the LPD time in this work. A turnaround breakdown behavior is observed for LPD/FO oxides with various LPD conditions. The oxide with an optimized fluorine concentration shows a significant improvement in oxide breakdown characteristics. © 1999 Elsevier Science Ltd. All rights reserved.
Other Subjects
Deposition; Fluorine; Optimization; Oxidation; Oxides; Fluorinated thin gate oxides; Furnace oxidation (FO); Liquid phase depositions (LPD); ULSI circuits
Type
journal article