Improvement in radiation hardness of oxide by successive irradiation-then-anneal treatments
Journal
Solid State Electronics
Journal Volume
32
Journal Issue
8
Pages
615-621
Date Issued
1989
Author(s)
Fu, S.-L.
Abstract
It was experimentally observed that MOS devices prepared by repeated irradiation-then-anneal treatments were more radiation hard than those without such treatments. A modified isochronal annealing method based on the newly reported flat-band-condition annealing approximation was used in this work to examine the activation energy distribution of the radiation-induced positive charges. It was found that an MOS device after X-ray irradiation with a dose rate of 200 k rads (SiO2)/min for 5 min exhibited a distribution of activation energy ranging from 1.2 to 1.8 eV. A sample which was subjected to a repeated irradiation-then-anneal treatments exhibited a significant reduction in the distribution of activation energy in the low energy region of 1.2-1.5 eV, but not in the high energy region of 1.5-1.8 eV. The activation energy distribution for samples prepared under various postoxidation treatments are discussed. © 1989.
Other Subjects
Heat Treatment--Annealing; Oxides--Radiation Effects; Semiconductor Materials--Radiation Effects; Activation Energy Distribution; Irradiation-Then-Anneal Treatments; Isochronal Annealing; Radiation Hardness; Semiconductor Devices, MOS
Type
journal article