https://scholars.lib.ntu.edu.tw/handle/123456789/347709| Title: | Constant bias-temperature and constant charge-temperature agings for silicon oxide films of MOS devices | Authors: | Hwu, J.-G. Chuang, J.-B. Fu, S.-L. JENN-GWO HWU |
Issue Date: | 1989 | Journal Volume: | 48 | Journal Issue: | 4 | Start page/Pages: | 377-383 | Source: | Applied Physics A Solids and Surfaces | URI: | http://www.scopus.com/inward/record.url?eid=2-s2.0-0024640611&partnerID=MN8TOARS http://scholars.lib.ntu.edu.tw/handle/123456789/347709 |
DOI: | 10.1007/BF00618902 |
| Appears in Collections: | 電機工程學系 |
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