Constant bias-temperature and constant charge-temperature agings for silicon oxide films of MOS devices
Journal
Applied Physics A Solids and Surfaces
Journal Volume
48
Journal Issue
4
Pages
377-383
Date Issued
1989
Author(s)
Abstract
Effects of the conventional constant bias-temperature aging and newly reported constant charge-temperature aging on the silicon oxide films of MOS devices are theoretically and experimentally compared. Under the positive field condition, it is found that the movement of mobile ionic charges is different between these agings. In constant bias-temperature aging there appears an increasing peak electric field EPat the SiO2-Si interface and a constant gate voltage VGduring aging, while in constant charge-temperature aging there appears a constant Ep and a decreasing VG.The time dependencies of the flatband voltage VFB for both cases are consistent with the experimental results. Under the negative field condition, the trapping of the holes from Si into SiO2 is important. It is found that the variation of the electric field Eiat the SiO2-Si interface depends strongly on the aging method. An aging with constant Eiexcludes the field variation effect during annealing, and can be achieved by the successive charge-temperature technique. Experimental results of these agings are given for comparison. © 1989 Springer-Verlag.
SDGs
Type
journal article