Constant bias-temperature and constant charge-temperature agings for silicon oxide films of MOS devices

Journal

Applied Physics A Solids and Surfaces

Journal Volume

48

Journal Issue

4

Pages

377-383

Date Issued

1989

Author(s)

Hwu, J.-G.

Chuang, J.-B.

Fu, S.-L.

DOI

10.1007/BF00618902

URI

http://www.scopus.com/inward/record.url?eid=2-s2.0-0024640611&partnerID=MN8TOARS

http://scholars.lib.ntu.edu.tw/handle/123456789/347709

Type

journal article