https://scholars.lib.ntu.edu.tw/handle/123456789/348162
標題: | Photoluminescence studies of MBE-grown ZnO and MgZnO epitaxial layers | 作者: | Kuok?tis, E. Karaliunas, M. Jur?enas, S. Miasojedovas, S. Serevi?ius, T. Ting, S.-Y. Huang, J.-J. CHIH-CHUNG YANG |
公開日期: | 2009 | 卷: | 6 | 期: | 12 | 起(迄)頁: | 2668-2670 | 來源出版物: | Physica Status Solidi (C) Current Topics in Solid State Physics | 摘要: | Photoluminescence (PL) and optical gain properties of ZnO and MgZnO epitaxial layers were investigated under different excitation conditions in a wide temperature range. The high-quality layers were grown by molecular beam epitaxy technique. CW laser radiation, nano- and pico-second light pulses were used as photoexcitation source. Spontaneous, stimulated, time-resolved and time-integrated PL of ZnO-based layers are analyzed. The PL of the layers under low excitation is caused by annihilation of free excitons in the near-band-edge region. Increase of excitation in ZnO leads to radiative recombination due to non-elastic collisions of excitons with typical P-line in the spectrum. Under extremely high levels of pumping excitons undergo the Mott transition and broad electron-hole band predominates in the PL spectrum. The latter mechanism is responsible for optical gain of ZnO. © 2009 Wiley-VCH Verlag GmbH & Co. KGaA. |
URI: | http://www.scopus.com/inward/record.url?eid=2-s2.0-77955453840&partnerID=MN8TOARS http://scholars.lib.ntu.edu.tw/handle/123456789/348162 https://www.scopus.com/inward/record.uri?eid=2-s2.0-77955453840&doi=10.1002%2fpssc.200982570&partnerID=40&md5=b7be8caf9832fecdd96395373e517dab |
ISSN: | 18626351 | DOI: | 10.1002/pssc.200982570 | SDG/關鍵字: | CW-laser; Elastic collision; Electron hole; Excitation conditions; Free excitons; High quality; Latter mechanism; Light pulse; Mott transitions; Near band edge; Optical gain properties; PL spectra; Radiative recombination; Temperature range; Time-resolved; ZnO; Building materials; Crystal growth; Excitons; Insulating materials; Molecular beam epitaxy; Molecular beams; Optical gain; Photoexcitation; Photoluminescence; Pulsed laser applications; Zinc oxide |
顯示於: | 電機工程學系 |
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