Probing insulator-quantum hall transitions by current heating
Journal
Journal of the Korean Physical Society
Journal Volume
55
Journal Issue
1
Pages
64-67
Date Issued
2009
Author(s)
Aoki, N.
Ochiai, Y.
Cheng, K.A.
Lin, L.-H.
Huang, C.F.
Li, Y.-R.
Tseng, Y.S.
Yang, C.-K.
Lin, P.-T.
Wu, J.-Y.
Lin, S.-D.
Abstract
We report a magneto-transport study on the two-dimensional electron system (2DES) in an Al-GaAs/GaAs heterostructure. The direct insulator to quantum Hall conductor transition is observed at low temperatures by increasing the magnetic field B perpendicular to the 2DES. We can also observe the transition by varying the current I and find a relation Te - Ia between electron effective temperature Te and current. Here, a denotes the exponent for the power law. The exponent a, however, can have different values on the two sides of the transition point, which indicates different inelastic scattering mechanisms in the low-field insulator and in the quantum Hall conductor.
We report a magneto-transport study on the two-dimensional electron system (2DES) in an Al-GaAs/GaAs heterostructure. The direct insulator to quantum Hall conductor transition is observed at low temperatures by increasing the magnetic field B perpendicular to the 2DES. We can also observe the transition by varying the current I and find a relation Te - Ia between electron effective temperature Te and current. Here, a denotes the exponent for the power law. The exponent a, however, can have different values on the two sides of the transition point, which indicates different inelastic scattering mechanisms in the low-field insulator and in the quantum Hall conductor.
SDGs
Type
journal article