Enhanced phase relaxation in a hybrid ferromagnet/semiconductor system
Journal
Journal of the Korean Physical Society
Journal Volume
55
Journal Issue
1
Pages
173-176
Date Issued
2009
Author(s)
Abstract
Hybrid ferromagnet/semiconductor systems have been the focus of considerable attention because of the transport properties of two-dimensional electron systems and their potential applications to magnetic storage and sensing devices. We use the weak localization effect to probe the dephasing mechanism at low temperatures. In our study, the zero-temperature phase-relaxation rate can be enhanced in a hybrid ferromagnet/semiconductor system, which may be due to the inhomogeneous magnetic field emanating from the Ni film. The result may improve understanding of the issue of zero-temperature dephasing in disordered systems.
SDGs
Type
journal article