Double side electroluminescence from p-NiO/n-ZnO nanowire heterojunctions
Journal
Applied Physics Letters
Journal Volume
95
Journal Issue
13
Date Issued
2009
Author(s)
Wang, J.-Y.
Lee, C.-Y.
Chen, Y.-T.
Chen, C.-T.
Chen, Y.-L.
Lin, C.-F.
Chen, Y.-F.
Abstract
Double side light emission devices based on p-NiO/n-ZnO nanowire heterojunctions have been fabricated on indium tin oxide substrate by radio frequency magnetron sputtering combined with hydrothermal process. According to the energy band alignment, the detected broad visible and narrow ultraviolet electroluminescence arise from defect and band edge transitions in ZnO nanowires, respectively. The unique property of the double side emission is due to the nature of the large band gap of NiO film. It provides a good opportunity for the emission of a light emitting device with different colors on the top and back sides, simultaneously. © 2009 American Institute of Physics.
SDGs
Type
journal article