A 5.79-dB NF, 30-GHz-band monolithic LNA with 10 mW power consumption in standard 0.18-μm CMOS technology
Journal
Microwave and Optical Technology Letters
Journal Volume
51
Journal Issue
4
Pages
933-937
Date Issued
2009
Author(s)
Abstract
Abstract A 30‐GHz (Ka‐band) low‐noise amplifier (LNA) with 10 mW power consumption (P DC ) using standard 0.18‐μm CMOS technology was designed and implemented. To achieve sufficient gain, this LNA was composed of three cascade common‐source stages, and a series peaking inductor (L g3 ) was added to the input terminal of the third stage to boost the peak gain (S 21‐max ) from 11.7 (at 28.8 GHz) to 14.5 (at 28 GHz), i.e., 23.9% (simulation). Shunt RC feedback was adopted in the third stage for achieving good output impedance matching. At 30 GHz, this LNA achieved excellent input return loss (S 11 ) of −19.5 dB, output return loss (S 22 ) of −23.8 dB, forward gain (S 21 ) of 11.1 dB, reverse isolation (S 12 ) of −49.2 dB, and noise figure of 5.79 dB. The corresponding gain/P DC was 1.11, which is better than those of the CMOS LNAs around 30 GHz reported in the literature. The measured input‐referred 1‐dB compression point (P 1dB‐in ) and input third‐order intermodulation point (IIP3) were −10.9 and −2 dBm, respectively. © 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 933–937, 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24250
SDGs
Type
journal article