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College of Electrical Engineering and Computer Science / 電機資訊學院
Electrical Engineering / 電機工程學系
Bandgap dependence of band-to-band tunneling and defect-mediated excess currents in SiGe/Si heterojunction tunnel diodes grown by RTCVD
Details
Bandgap dependence of band-to-band tunneling and defect-mediated excess currents in SiGe/Si heterojunction tunnel diodes grown by RTCVD
Journal
Device Research Conference
Pages
99-100
Date Issued
2009
Author(s)
Li, J.-Y.
Sturm, J.C.
JIUN-YUN LI
DOI
10.1109/DRC.2009.5354859
URI
http://www.scopus.com/inward/record.url?eid=2-s2.0-76549130404&partnerID=MN8TOARS
http://scholars.lib.ntu.edu.tw/handle/123456789/350501
Type
conference paper
