https://scholars.lib.ntu.edu.tw/handle/123456789/350814
標題: | A thermally cured 9,9-diarylfluorene-based triaryldiamine polymer displaying high hole mobility and remarkable ambient stability | 作者: | Lin, C.-Y. Lin, Y.-C. Hung, W.-Y. KEN-TSUNG WONG Kwong, R.C. Xia, S.C. Chen, Y.-H. CHIH-I WU |
公開日期: | 2009 | 卷: | 19 | 期: | 22 | 起(迄)頁: | 3618-3623 | 來源出版物: | Journal of Materials Chemistry | 摘要: | We have synthesized and characterized a novel thermally polymerizable triaryldiamine monomer (VB-FNPD) possessing a styrene-functionalized 9,9-diarylfluorene core and have used time-of-flight transient photocurrent techniques to investigate the hole transport properties of its solution-processed and subsequently thermally cured (170 °C) polymer films. This novel polymeric material exhibits non-dispersive hole transport behavior with a high hole drift mobility (up to 10-4 cm2 V -1 s-1). The film displayed remarkable ambient stability, even when exposed to air for one month. We tested the thermally generated polymer film as a hole transport material in organic light-emitting diodes incorporating tris(8-hydroxyquinolate) aluminium (Alq3) as the emission and electron transport layer. The device exhibited a maximum external quantum efficiency (ηex) of 1.4%, significantly better than that of the device prepared using the corresponding model compound VB-model (ηex = 1.1%). © 2009 The Royal Society of Chemistry. |
URI: | http://www.scopus.com/inward/record.url?eid=2-s2.0-66249145735&partnerID=MN8TOARS http://scholars.lib.ntu.edu.tw/handle/123456789/350814 |
ISSN: | 09599428 | DOI: | 10.1039/b900977a | SDG/關鍵字: | Ambient stability; Electron transport layers; External quantum efficiency; Functionalized; Hole drift-mobility; Hole transport materials; Hole transports; Model compound; Polymeric material; Solution-processed; Time of flight; Transient photocurrents; Curing; Functional polymers; Hole mobility; Light emitting diodes; Organic light emitting diodes (OLED); Plastic films; Polymers; Styrene; Transport properties; Polymer films |
顯示於: | 光電工程學研究所 |
在 IR 系統中的文件,除了特別指名其著作權條款之外,均受到著作權保護,並且保留所有的權利。