The Influence of Channel Compositions on the Electrical Properties of Solution-Processed Indium-Zinc Oxide Thin Film Transistors
Journal
IEEE/OSA Journal of Display Technology
Journal Volume
5
Journal Issue
12
Pages
515-519
Date Issued
2009-01
Author(s)
Abstract
Electrical properties of indium-zinc oxide (IZO) thin-film-transistors (TFTs) based on solution processes with various channel compositions are investigated in this paper. Amorphous IZO thin films with high transparency and smooth/uniform surfaces are deposited by spin-coating. The In:Zn ratio is varied by adjusting the precursor compositions, and its influences on the electrical properties, such as resistivity, mobility, and threshold voltage, etc., of IZO films and TFTs are studied. The devices showed field effect mobility ranging from 0.07 to 2.13 cm2/V · s with the In component (In/(In + Zn) varying from 0.2 to 0.5. © 2006 IEEE.
SDGs
Type
journal article