https://scholars.lib.ntu.edu.tw/handle/123456789/352342
標題: | Phase-change memory devices based on gallium-doped indium oxide | 作者: | Wang, S.-L. Chen, C.-Y. Hsieh, M.-K. Lee, W.-C. Kung, A. H. LUNG-HAN PENG |
公開日期: | 一月-2009 | 卷: | 94 | 起(迄)頁: | 113503 | 來源出版物: | Applied Physics Letters | 摘要: | We report repetitive phase-change memory (PCM) activity via the high- to low-resistance state transition in gallium-doped indium oxide (Ga:InO) induced by nanosecond electric pulses. The amorphous-to-crystalline phase transition of Ga:InO is found to occur at a crystallization temperature of ∼250°C with an activation energy of 1.27±0.07 eV. At the phase transition, we observe a change in two orders of magnitude in the PCM-device resistance, which can be correlated with the formation of (211) and {222} crystallites of bixbyite cubic In2 O3. We ascribe the phase-change mechanism to the Joule heating effect in Ga:InO. © 2009 American Institute of Physics. |
URI: | http://scholars.lib.ntu.edu.tw/handle/123456789/352342 https://www.scopus.com/inward/record.uri?eid=2-s2.0-63049113072&doi=10.1063%2f1.3089238&partnerID=40&md5=37d76491ceb51a544c52eb5686f5386f |
ISSN: | 00036951 | DOI: | 10.1063/1.3089238 | SDG/關鍵字: | Activation energy; Gallium; Indium; Phase transitions; Pulse code modulation; Bixbyite; Crystalline phase transitions; Crystallization temperatures; Device resistances; Gallium-doped indium oxides; Joule heating effects; Low-resistance state; Nanosecond electric pulse; Orders of magnitudes; Phase changes; Phase-change memories; Phase change memory |
顯示於: | 光電工程學研究所 |
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