https://scholars.lib.ntu.edu.tw/handle/123456789/352342
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Wang, S.-L. | en_US |
dc.contributor.author | Chen, C.-Y. | en_US |
dc.contributor.author | Hsieh, M.-K. | en_US |
dc.contributor.author | Lee, W.-C. | en_US |
dc.contributor.author | Kung, A. H. | en_US |
dc.contributor.author | LUNG-HAN PENG | en_US |
dc.creator | Wang, S.-L.;Chen, C.-Y.;Hsieh, M.-K.;Lee, W.-C.;Kung, A. H.;Peng, L.-H. | - |
dc.date.accessioned | 2018-09-10T07:42:42Z | - |
dc.date.available | 2018-09-10T07:42:42Z | - |
dc.date.issued | 2009-01 | - |
dc.identifier.issn | 00036951 | - |
dc.identifier.uri | http://scholars.lib.ntu.edu.tw/handle/123456789/352342 | - |
dc.identifier.uri | https://www.scopus.com/inward/record.uri?eid=2-s2.0-63049113072&doi=10.1063%2f1.3089238&partnerID=40&md5=37d76491ceb51a544c52eb5686f5386f | - |
dc.description.abstract | We report repetitive phase-change memory (PCM) activity via the high- to low-resistance state transition in gallium-doped indium oxide (Ga:InO) induced by nanosecond electric pulses. The amorphous-to-crystalline phase transition of Ga:InO is found to occur at a crystallization temperature of ∼250°C with an activation energy of 1.27±0.07 eV. At the phase transition, we observe a change in two orders of magnitude in the PCM-device resistance, which can be correlated with the formation of (211) and {222} crystallites of bixbyite cubic In2 O3. We ascribe the phase-change mechanism to the Joule heating effect in Ga:InO. © 2009 American Institute of Physics. | - |
dc.language | en | en |
dc.relation.ispartof | Applied Physics Letters | en_US |
dc.source | AH-anncc | - |
dc.subject.other | Activation energy; Gallium; Indium; Phase transitions; Pulse code modulation; Bixbyite; Crystalline phase transitions; Crystallization temperatures; Device resistances; Gallium-doped indium oxides; Joule heating effects; Low-resistance state; Nanosecond electric pulse; Orders of magnitudes; Phase changes; Phase-change memories; Phase change memory | - |
dc.title | Phase-change memory devices based on gallium-doped indium oxide | - |
dc.type | journal article | en |
dc.identifier.doi | 10.1063/1.3089238 | - |
dc.identifier.scopus | 2-s2.0-63049113072 | - |
dc.relation.pages | 113503 | - |
dc.relation.journalvolume | 94 | - |
item.openairecristype | http://purl.org/coar/resource_type/c_6501 | - |
item.openairetype | journal article | - |
item.grantfulltext | none | - |
item.cerifentitytype | Publications | - |
item.fulltext | no fulltext | - |
crisitem.author.dept | Photonics and Optoelectronics | - |
crisitem.author.dept | Electrical Engineering | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
顯示於: | 光電工程學研究所 |
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