CMOS Front-End LNA-Mixer for Micropower RF Wireless Systems
Journal
IEEE ISLPED
Pages
238-242
Date Issued
1999-08
Author(s)
Abstract
Motivated by the emerging needs for low power, low cost narrow-band wireless communication systems, the first micropower RFIC front-end has been implemented in standard CMOS technology. The front-end, an LNA combined with a down-conversion mixer, has been designed and fabricated in a HP 0.8 pm CMOS process. This mandates the use of high-Q discrete inductors to provide sufficient gain for the LNA. Employing these design methods, the front-end supply current is less than 110 pA with a 3V supply voltage for operation at 450 MHz. High-Q inductors have been manufactured using lowtemperature co-tired ceramic (LTCC) technology. The frontend's gain is 25 dB with an BP3 of -15 dBm. This is the lowest current consumption reported to date for a CMOS front-end operating at this frequency.
SDGs
Type
conference paper