https://scholars.lib.ntu.edu.tw/handle/123456789/357470
Title: | Self-aligned inversion-channel In 0.75 Ga 0.25 As metal-oxide-semiconductor field-effect-transistors using UHV-Al 2 O 3/Ga 2 O 3 (Gd 2 O 3) and ALD-Al 2 O 3 as gate dielectrics | Authors: | Lin, TD Chiu, HC Chang, P Chang, YH Wu, YD MINGHWEI HONG Kwo, J |
Issue Date: | 2010 | Journal Volume: | 54 | Journal Issue: | 9 | Start page/Pages: | 919-924 | Source: | Solid-State Electronics | URI: | http://scholars.lib.ntu.edu.tw/handle/123456789/357470 |
Appears in Collections: | 應用物理研究所 |
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