https://scholars.lib.ntu.edu.tw/handle/123456789/357965
標題: | GaAs nanowire/PEDOT:PSS hybrid solar cells: Morphological and performance characterization | 作者: | Chao, J.-J. Shiu, S.-C. Lin, C.-F. CHING-FUH LIN |
公開日期: | 2010 | 起(迄)頁: | 946-948 | 來源出版物: | IEEE Photovoltaic Specialists Conference | 摘要: | In this study, a new type of hybrid solar cell based on a heterojunction between poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) and vertically aligned n-type GaAs nanowire (NW) arrays is investigated. The GaAs NW arrays are fabricated by directly performing the nano-etching of GaAs wafer with spun-on SiO2 nanospheres as the etch mask through inductively coupled plasma reactive ion etching. The PEDOT:PSS adheres to the surface of GaAs NW arrays to form a p-n junction. The morphology of GaAs NW arrays strongly influences the characteristics of the GaAs NW/PEDOT:PSS hybrid solar cells. The suppression of reflectance and the interpenetrating heterojunction interface of GaAs NW arrays will offer great improvements in efficiency relative to a conventional planar cell. The power conversion efficiency of GaAs NW/PEDOT:PSS cells under AM 1.5 global one sun illumination can achieve 5.8 %. © 2010 IEEE. |
URI: | http://www.scopus.com/inward/record.url?eid=2-s2.0-78650105040&partnerID=MN8TOARS http://scholars.lib.ntu.edu.tw/handle/123456789/357965 |
DOI: | 10.1109/PVSC.2010.5614644 | SDG/關鍵字: | Etch mask; Ethylenedioxythiophenes; GaAs; Gaas nanowires; GaAs wafer; Hybrid solar cells; Inductively coupled-plasma reactive ion etching; Interpenetrating heterojunctions; One-sun illumination; P-n junction; PEDOT:PSS; Performance characterization; Planar cells; Poly(styrene sulfonate); Power conversion efficiencies; Vertically aligned; Conversion efficiency; Electromagnetic induction; Gallium alloys; Gallium arsenide; Heterojunctions; Inductively coupled plasma; Nanowires; Photovoltaic effects; Reactive ion etching; Silicon compounds; Solar cells; Semiconducting gallium |
顯示於: | 電機工程學系 |
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