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College of Electrical Engineering and Computer Science / 電機資訊學院
Electrical Engineering / 電機工程學系
Modeling the Floating-Body-Effect-Induced Drain Current Behavior of 40nm PD SOI NMOS Device Via SPICE BJT/MOS Model Approach
Details
Modeling the Floating-Body-Effect-Induced Drain Current Behavior of 40nm PD SOI NMOS Device Via SPICE BJT/MOS Model Approach
Journal
EUROSOI
Date Issued
2010-01
Author(s)
J. S. Su
J. B. Kuo
D. Chen
C. S. Yeh
JAMES-B KUO
URI
http://scholars.lib.ntu.edu.tw/handle/123456789/359229
Type
conference paper