Type-II heterojunction organic/inorganic hybrid non-volatile memory based on FeS2 nanocrystals embedded in poly(3-hexylthiophene)
Journal
Journal of Physics D: Applied Physics
Journal Volume
44
Journal Issue
29
Date Issued
2011
Author(s)
Abstract
Electrical bistable behaviour was demonstrated in memory devices based on n-type FeS2 nanocrystals (NCs) embedded in a p-type poly(3-hexylthiophene) (P3HT) matrix. An organic/inorganic hybrid non-volatile memory device with a type-II band alignment, fabricated by a spin-coating process, exhibited electrical bistable characteristics. The bistable behaviour of carrier transport can be well described through the space-charge-limited current model. The small amount of FeS2 NCs in this device serve as an excellent charge trapping medium arising from the type-II band alignment between FeS2 and P3HT. Our study suggests a new way to integrate non-volatile memory with other devices such as transistor or photovoltaic since the presented FeS2/P3HT offers a type-II band alignment. © 2011 IOP Publishing Ltd.
SDGs
Other Subjects
Band alignments; Bistables; Electrical bistable; matrix; Non-volatile memories; Nonvolatile memory devices; Organic/Inorganic hybrids; P-type; Poly-3-hexylthiophene; Space-charge-limited current; Spin-coating process; Alignment; Coatings; Heterojunctions; Nanocrystals; Optical bistability; Carrier mobility
Type
journal article