Two-state current conduction in high-k/SiO2 stacked dielectric with high bandgap 4H-SiC substrate
Journal
ECS Transactions
Journal Volume
35
Journal Issue
6
Pages
165-171
Date Issued
2011
Author(s)
Abstract
In the high-k/SiO2 stacked dielectric MOS capacitor, the electrons captured by the defects associated with the oxygen vacancies in the dielectric may affect the trap assist tunneling current of the device. In this work, high bandgap material was utilized as substrate for its considerable interface states which are important to enhance the effect of trapped charges on the tunneling current. It was found that the electrons captured in high-k/SiO2 interface layer were crucial to block the current conduction path. Two-state current behavior was clearly observed by this mechanism.
Type
conference paper