|Title:||Photovoltaic characteristics of MOS structure with photo enhanced trap assist tunneling current by oxide etching||Authors:||Wang, C.-Y.
|Keywords:||photovoltaic; side wall; trap assist tunneling||Issue Date:||2011||Source:||International NanoElectronics Conference, INEC||Abstract:||
In this work, MOS photovoltaic mechanism with side wall trap-assist tunneling path by oxide etching was demonstrated. It was clearly observed that the photo response of device with oxide etching is tremendously enhanced with respect to that without. The efficiency of MOS photovoltaic with side wall trap-assist tunneling is strongly dependent on the etched potion of oxide. The perimeter of electrode is critical for MOS photovoltaic application. © 2011 IEEE.
|DOI:||10.1109/INEC.2011.5991675||SDG/Keyword:||MOS structure; Oxide etching; Photoresponses; photovoltaic; Photovoltaic applications; Photovoltaic characteristics; Side walls; Tunneling current; Tunneling paths; Etching; Nanoelectronics; Photovoltaic effects
|Appears in Collections:||電機工程學系|
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