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College of Electrical Engineering and Computer Science / 電機資訊學院
Electrical Engineering / 電機工程學系
Comprehensive study on negative capacitance effect observed in MOS(n) capacitors with ultrathin gate oxides
Details
Comprehensive study on negative capacitance effect observed in MOS(n) capacitors with ultrathin gate oxides
Journal
IEEE Transactions on Electron Devices
Journal Volume
58
Journal Issue
3
Pages
684-690
Date Issued
2011
Author(s)
Chang, S.-J.
Hwu, J.-G.
JENN-GWO HWU
DOI
10.1109/TED.2010.2102033
URI
http://www.scopus.com/inward/record.url?eid=2-s2.0-79952036866&partnerID=MN8TOARS
http://scholars.lib.ntu.edu.tw/handle/123456789/363036
Type
journal article