Comprehensive study on negative capacitance effect observed in MOS(n) capacitors with ultrathin gate oxides

Journal

IEEE Transactions on Electron Devices

Journal Volume

58

Journal Issue

3

Pages

684-690

Date Issued

2011

Author(s)

Chang, S.-J.

Hwu, J.-G.

DOI

10.1109/TED.2010.2102033

URI

http://www.scopus.com/inward/record.url?eid=2-s2.0-79952036866&partnerID=MN8TOARS

http://scholars.lib.ntu.edu.tw/handle/123456789/363036

Type

journal article