https://scholars.lib.ntu.edu.tw/handle/123456789/363037| Title: | Comparison of the reliability of thin Al2O3 gate dielectrics prepared by in situ oxidation of sputtered aluminum in oxygen ambient with and without nitric acid compensation | Authors: | Lin, C.-C. Hwu, J.-G. JENN-GWO HWU |
Issue Date: | 2011 | Journal Volume: | 11 | Journal Issue: | 2 | Start page/Pages: | 227-235 | Source: | IEEE Transactions on Device and Materials Reliability | URI: | http://www.scopus.com/inward/record.url?eid=2-s2.0-79959530084&partnerID=MN8TOARS http://scholars.lib.ntu.edu.tw/handle/123456789/363037 |
DOI: | 10.1109/TDMR.2011.2108300 |
| Appears in Collections: | 電機工程學系 |
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