https://scholars.lib.ntu.edu.tw/handle/123456789/363037
標題: | Comparison of the reliability of thin Al2O3 gate dielectrics prepared by in situ oxidation of sputtered aluminum in oxygen ambient with and without nitric acid compensation | 作者: | Lin, C.-C. Hwu, J.-G. JENN-GWO HWU |
公開日期: | 2011 | 卷: | 11 | 期: | 2 | 起(迄)頁: | 227-235 | 來源出版物: | IEEE Transactions on Device and Materials Reliability | URI: | http://www.scopus.com/inward/record.url?eid=2-s2.0-79959530084&partnerID=MN8TOARS http://scholars.lib.ntu.edu.tw/handle/123456789/363037 |
DOI: | 10.1109/TDMR.2011.2108300 |
顯示於: | 電機工程學系 |
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